First CCD-in-CMOS-Based Multispectral TDI Image Sensor
نویسندگان
چکیده
منابع مشابه
Prototype TDI sensors in embedded CCD in CMOS technology
This paper describes prototype time-delayintegration (TDI) sensors designed at Imec under CNES (French Space Agency) contract. The sensors combine a lightsensitive embedded CCD TDI section with a CMOS readout multiplexer on the same die and, fabricated using a modified 130nm CMOS-CIS technology. Introduction: In imaging applications where either the sensor or the target is in constant relative ...
متن کاملA Fixed-Pattern Noise Correction Method Based on Gray Value Compensation for TDI CMOS Image Sensor
In order to eliminate the fixed-pattern noise (FPN) in the output image of time-delay-integration CMOS image sensor (TDI-CIS), a FPN correction method based on gray value compensation is proposed. One hundred images are first captured under uniform illumination. Then, row FPN (RFPN) and column FPN (CFPN) are estimated based on the row-mean vector and column-mean vector of all collected images, ...
متن کاملA Low Power Digital Accumulation Technique for Digital-Domain CMOS TDI Image Sensor
In this paper, an accumulation technique suitable for digital domain CMOS time delay integration (TDI) image sensors is proposed to reduce power consumption without degrading the rate of imaging. In terms of the slight variations of quantization codes among different pixel exposures towards the same object, the pixel array is divided into two groups: one is for coarse quantization of high bits ...
متن کاملA 0.5p,m Pixel Frame-Transfer CCD Image Sensor in 110nm CMOS
and digital circuits. The FFT-CCD image sensor consists of a The first image sensor with submicron pixel pitch is reported. CCD pixel array, a CCD storage array, a horizontal CCD, and Test structures comprising 16 x 16 pixel Full-Frame-Transfer a source follower readout circuit (see Fig. 1). The pixel array (FFT) CCDs with 0.5,um pixels are fabricated in a single-poly uses no metal layers to ac...
متن کاملA 0.5μm Pixel Frame-Transfer CCD Image Sensor in 110nm CMOS
The first image sensor with submicron pixel pitch is reported. Test structures comprising 16× 16 pixel Full-Frame-Transfer (FFT) CCDs with 0.5μm pixels are fabricated in a single-poly 110nm CMOS process. Characterization results demonstrate charge transfer efficiency of 99.9%, QE of 48% at 550nm, conversion gain of 193μV/e-, well capacity of 3550e-, dark current of 50e-/sec with nonuniformity o...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optik & Photonik
سال: 2017
ISSN: 1863-1460
DOI: 10.1002/opph.201700021